MOSFETs | FQD3P50TM_F085

500V，P 沟道 MOSFET

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此类 P 沟道增强型电场效应晶体管是使用平面条纹 DMOS 专属工艺生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适合基于互补半桥的电子灯镇流器。

  • 传动系
  • - 2.1A，-500V，RDS(on) = 4.9Ω @VGS = -10 V
  • 低栅极电荷（典型值18 nC）
  • 低Crss（典型值9.5pF）
  • 快速开关
  • 100%经过雪崩测试
  • 可提高dv/dt处理能力
  • 符合AEC Q101
  • 符合RoHS标准

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