MOSFETs | FQD4P25TM_WS

P 沟道，QFET® MOSFET，-250V，-3.1A，2.1Ω

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概览

此 P 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属工艺生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 照明
  • -3.1 A、-250 V、RDS(on) = 2.1Ω ，需 VGS = -10 V
  • 较低的栅极电荷（典型值为 10 nC）
  • 较低的 Crss（典型值为 10.3 pF）
  • 快速开关
  • 100% 经过雪崩击穿测试

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQD4P25TM-WS

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-250

2100

P-Channel

Single

±30

-5

-3.1

45

-

-

-

10.3

325

Price N/A

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