FQD7N10L

N 沟道 QFET^® MOSFET 100V，5.8A，350mΩ

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CAD模型

概览

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

应用

LED 电视
照明

特性

5.8A, 100V, R_DS(on) = 350mΩ（最大值）@V_GS = 10 V, I_D = 2.9A栅极电荷低（典型值：4.6nC)
低 C_rss（典型值12pF)
100% 经过雪崩击穿测试
100% avalanche tested

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQD7N10LTM

Last Shipments

DPAK-3 / TO-252-3

369AS

260

REEL

2500

100

350

N-Channel

Single

±20

5.8

380

4.6

220

Price N/A

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MOSFETs | FQD7N10L

N 沟道 QFET® MOSFET 100V，5.8A，350mΩ

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N 沟道 QFET^® MOSFET 100V，5.8A，350mΩ