MOSFETs | FQI4N80

800V N沟道QFET®

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概览

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

  • 其他工业
  • 3.9A，800V，RDS(on) = 3.6Ω（最大值）（VGS = 10 V 且 ID = 2.75A 时）
  • 低栅极电荷（典型值 19nC)
  • 低 Crss（典型值 8.6pF)
  • 100% 经过雪崩击穿测试

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQI4N80TU

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Last Shipments

CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

1000

N

800

3600

N-Channel

Single

±30

5

3.9

130

-

-

-

19

680

Price N/A

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