MOSFETs | FQL40N50F

功率 MOSFET，N 沟道，QFET®，FRFET®，500 V，40 A，110mΩ，TO-264

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概览

此 N 沟道增强型功率 MOSFET 使用平面条纹和 DMOS 专属工艺生产。此先进 MOSFET 工艺适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 40A, 500V, RDS(on) = 110mΩ（最大值）@VGS = 10 V, ID = 20A栅极电荷低（典型值：155nC)
  • 低 Crss（典型值95pF)
  • 100% 经过雪崩击穿测试
  • 快速恢复体二极管（最大值 250ns）
  • Fast recovery body diode ( Max. 250ns )

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQL40N50F

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Last Shipments

CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

500

110

N-Channel

Single

±30

5

40

460

-

-

-

155

5800

Price N/A

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