FQNL2N50B

N 沟道 QFET^® MOSFET 500V，0.35A，5.3Ω

相似产品推荐

产品

向销售发送邮件

添加至我的收藏

数据表

CAD模型

概览

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。

应用

照明

特性

0.35A, 500V, R_DS(on) = 5.3Ω（最大值）@V_GS = 10 V, I_D = 0.175A栅极电荷低（典型值：6nC)
低 C_rss（典型值4pF)
Low C_rss ( Typ. 4pF)

物质成分

产品更改通知

产品列表

如需购买产品或样品，请先登录您的安森美账号。

搜寻

产品:

排序方式

Product Groups:

┗

Orderable Parts:

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQNL2N50BTA

Obsolete

TO-92-3 LF

135AM

FNFLD

2000

500

5300

N-Channel

Single

±30

3.7

0.35

1.5

180

Price N/A

产品型号:

分销代理商		Stock	BUY

名字*

Please provide a first name.

姓氏*

Please provide a last name.

公司*

Please provide a company/university name.

Please provide a valid email.

企业邮箱*

国家/地区*

Please choose a country.

职位*

Please choose a job title.

电话

我们销售团队有什么能帮到您的设计吗?

Please provide a how could we help you.

我同意我所提供的信息可按照安森美隐私政策和使用条款被使用。

You have to agree with the privacy policy.

Hello, your current browser settings are preventing us from processing your submission. You can adjust your browser settings and reload the page or you can submit an email directly to inside.sales@onsemi.com

You might also try the following:

Clear your browser cookies
Try to open this page in anonymous browser window
Try a different browser
Make sure you have reliable internet connection

MOSFETs | FQNL2N50B

N 沟道 QFET® MOSFET 500V，0.35A，5.3Ω

概览

产品列表

向销售发送邮件

N 沟道 QFET^® MOSFET 500V，0.35A，5.3Ω