FQP13N50

功率 MOSFET，N 沟道，QFET®，500 V，12.5 A，430 mΩ，TO-220

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CAD模型

概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属工艺生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

应用

其他工业

特性

12.5A, 500V, R_DS(on) = 430mΩ（最大值）@V_GS = 10 V, I_D = 6.25A栅极电荷低（典型值：45nC)
低 C_rss（典型值25pF)
100% 经过雪崩击穿测试
100% avalanche tested

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP13N50

Last Shipments

TO-220-3

340AT

TUBE

1000

500

430

N-Channel

Single

±30

12.5

170

1800

Price N/A

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MOSFETs | FQP13N50

功率 MOSFET，N 沟道，QFET®，500 V，12.5 A，430 mΩ，TO-220

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