MOSFETs | FQP50N06

功率 MOSFET，N 沟道，QFET®，60 V，50 A，22 mΩ，TO-220

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此类 N 沟道 MOSFET 增强型电场效应晶体管是使用 Fairchild 的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于汽车、DC/DC 转换器，以及便携式和电池运行产品中用于电源管理的高效开关等低压应用。

  • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
  • Low gate charge ( typical 31 nC)
  • Low Crss ( typical 65 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQP50N06

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

60

22

N-Channel

Single

±25

4

50

120

-

-

-

41

1180

Price N/A

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