MOSFETs | FQPF12N60C

功率 MOSFET，N 沟道，QFET®，600 V，12 A，650 mΩ，TO-220F

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概览

此类 N 沟道 MOSFET 增强型电场效应晶体管是使用安森美半导体的平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供出色的开关性能，可承受雪崩和换相模式下的高能量脉冲。这些器件非常适用于高效开关模式电源、功率因数校正、基于半桥的电子灯镇流器。

  • 12 A、600 V、RDS(on) = 650 mΩ（最大值）@ VGS = 10 V、ID = 6 A
  • 低栅极电荷（典型值 48 nC)
  • 低 Crss（典型值 21 pF)
  • 100% 经过雪崩击穿测试

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQPF12N60C

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

600

650

N-Channel

Single

4

4

12

51

-

-

-

8.5

1760

Price N/A

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