MOSFETs | FQPF22N30

N 沟道，QFET® MOSFET，300V，12A，160mΩ

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概览

此 N 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属工艺生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 其他工业
  • 12A, 300V, RDS(on) = 160mΩ（最大值）@VGS = 10 V, ID = 6A栅极电荷低（典型值：47nC)
  • 低 Crss（典型值40pF)
  • 100% 经过雪崩击穿测试"
  • 100% avalanche tested

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQPF22N30

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

300

160

N-Channel

Single

±30

5

12

56

-

-

-

47

1700

Price N/A

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