MOSFETs | FQT1N60C

功率 MOSFET，N 沟道，QFET®，600 V，0.2 A，11.5 Ω，SOT-223

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此 N 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 照明
  • 0.2A, 600V, RDS(on) = 9.3Ω（典型值）@VGS = 10 V, ID = 0.1A栅极电荷低（典型值：4.8nC）
  • 低 Crss（典型值3.5pF）
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • RoHS compliant

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