MOSFETs | FQT3P20

功率 MOSFET，P 沟道，QFET®，-200 V，-0.67 A，2.7 Ω，SOT-223

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概览

此 P 沟道增强型功率 MOSFET 是使用 Fairchild Semiconductor 的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • 其他工业
  • -0.67 A、-200 V、RDS(on) = 2.7 Ω（最大值），需 VGS = -10 V、ID = -0.335 A栅极电荷低（典型值：6nC)
  • 低 Crss（典型值7.5pF)
  • Low Crss ( Typ. 7.5pF)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQT3P20TF

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Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

-200

2700

P-Channel

Single

±30

-5

-0.67

2.5

-

-

-

6

190

Price N/A

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