MOSFETs | FQU1N80

分立式 MOSFET

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This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplied, active power factor correction (PFC), and electronic lamp balasts.

  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
  • 1.0A, 800V,
    RDS(on) = 20Ω (Max.) @ VGS = 10 V, ID = 0.5 A
  • Low Gate Charge (Typ. 5.5 nC)
  • Low Crss (Typ. 2.7 pF)
  • 100% Avalanche Tested

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQU1N80TU

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

369AR

NA

0

TUBE

5040

N

800

20000

N-Channel

Single

±30

5

1

45

-

-

-

5.5

150

Price N/A

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