FQU3N60CTU

功率 MOSFET，N 沟道，QFET®，600 V，2.4 A，3.4 Ω，IPAK

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CAD模型

概览

此 N 沟道增强型功率 MOSFET 使用安森美半导体的平面条纹和 DMOS 专属工艺生产。此先进 MOSFET 工艺适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

应用

Lighting

特性

2.4A, 600V, R_DS(on) = 3.4Ω(Max.) @V_GS = 10 V, I_D = 1.2A
Low gate charge ( Typ. 10.5nC)
Low C_rss ( Typ. 5pF)
100% avalanche tested

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQU3N60CTU

Obsolete

IPAK-3 / DPAK-3 STRAIGHT LEAD

369AR

TUBE

5040

600

3400

N-Channel

Single

2.4

10.5

Price N/A

产品型号:

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MOSFETs | FQU3N60CTU

功率 MOSFET，N 沟道，QFET®，600 V，2.4 A，3.4 Ω，IPAK

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