MOSFETs | HUF75639S_F085A

100 V、56 A、21 mΩ、D2PAK
N 沟道 UltraFET® Trench

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概览

这些N沟道功率MOSFET采用创新的UltraFET®工艺制造。 这种先进工艺技术实现了单位硅面积内最低的通态电阻，可以带来出色的性能。 此器件能够在雪崩模式下承受高能量并且二极管具有极低的反向恢复时间和存储电荷。 此器件设计用于能效非常重要的应用，例如开关稳压器、开关转换器、电机驱动器、继电器驱动器、低电压总线开关以及便携式设备和电池供电产品的功率管理。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

HUFA75639S3ST-F085A

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

100

25

N-Channel

Single

±20

4

56

200

-

-

-

57

2000

Price N/A

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