MOSFETs | HUF76609D3S

N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ

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N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • 超低导通电阻
  • 仿真模型
  • 峰值电流与脉宽曲线
  • UIS 额定值曲线
  • 开关时间与RGS曲线

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

HUF76609D3ST

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

100

130

N-Channel

Single

±20

3

10

49

-

168

-

7.3

425

Price N/A

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