MOSFETs | IRLM120A

N 沟道 A-FET 200 V、1.13 A、800 mΩ

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CAD Model

CAD模型

概览

  • 雪崩耐用技术
  • 坚固的门栅氧化层技术与较低的输入电容
  • 增加的栅极电荷
  • 增加安全工作区域范围
  • 更低的漏电流： 10 µA（最大值）@ VDS = 200 V
  • 更低的 RDS(ON)： 0.609 Ω（典型值）

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

IRLM120ATF

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Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

250

REEL

4000

N

200

-

N-Channel

Single

±20

20

1.13

2.7

-

220

10.2

-

340

Price N/A

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