MOSFETs | IRLS640A

功率 MOSFET，N 沟道，逻辑电平，A-FET，200 V，9.8 A，180 mΩ，TO-220F

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概览

此类 N 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关 DC/DC 转换器、开关模式电源、用于非中断电源的 DC-AC 转换器和电机控制。

  • 其他工业
  • 9.8 A, 200 V
    rDS(ON) = 180 mΩ @ VGS = 5 V
  • Low Gate Charge (Typ. 40 nC)
  • Low Crss (Typ. 95 pF)
  • Fast Switching Speed
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Logic-Level Gate Drive

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

IRLS640A

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

200

-

N-Channel

Single

±20

2

9.8

40

-

180

5.6

40

1310

Price N/A

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