MOSFETs | MTB1306

弃用 - 替代零件编号 - NTB75N03L09

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弃用 - 此功率 MOSFET 适用于承受雪崩和换相模式下的高能量。能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬变电压提供附加安全裕度。

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Short Heatsink Tab Manufactured Not Sheared
  • Specially Designed Leadframe for Maximum Power Dissipation

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