Power MOSFET 20 Amps, 60 Volts

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概览

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Diode is Characterized for use in Bridge Circuits
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Avalanche Energy Specified
  • IDSS and VDS (on) Specified at Elevated Temperature

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTD20N06HDT4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

1

235

REEL

2500

N

60

-

N-Channel

Single

-

-

20

40

-

-

-

-

-

Price N/A

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