功率 MOSFET,10 A,100 V,逻辑电平

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概览

此功率 MOSFET 适用于承受雪崩和换相模式下的高能量。能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用,尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路,可针对非预期的瞬变电压提供附加安全裕度。

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free Package is Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTP10N10EL

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

100

-

N-Channel

Single

15

-

10

40

-

-

-

-

-

Price N/A

More Details

MTP10N10ELG

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

100

-

N-Channel

Single

15

-

10

40

-

-

-

-

-

Price N/A

More Details

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