Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level

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概览

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Pb-Free Packages are Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTP50P03HDL

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

30

-

P-Channel

Single

15

2

50

125

-

25

-

74

3500

Price N/A

More Details

MTP50P03HDLG

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

30

-

P-Channel

Single

15

2

50

125

-

25

-

74

3500

Price N/A

More Details

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