MOSFETs | MTW32N20E

功率 MOSFET，200V，32A，75mΩ，单 N 沟道，TO-247

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此高级功率 MOSFET 适用于承受雪崩和换相模式下的高能量。新型能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬变电压提供附加安全裕度。

  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Isolated Mounting Hole
  • Pb-Free Package is Available

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MTW32N20E

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340K-01

NA

0

TUBE

30

N

200

75

N-Channel

Single

20

4

32

180

-

-

-

85

3600

Price N/A

More Details

MTW32N20EG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340K-01

NA

0

TUBE

30

N

200

75

N-Channel

Single

20

4

32

180

-

-

-

85

3600

Price N/A

More Details

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