单 P 沟道,逻辑电平,功率 MOSFET,-30V,-50A,25mΩ

添加至我的收藏

概览

可承受雪崩和换相模式下高能量的汽车用功率 MOSFET。能效设计还提供了具有快速恢复时间的漏极-源极二极管。此类器件专用于电源、转换器和 PWM 电机控制中的低电压、高速开关应用,尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路,可针对非预期的瞬变电压提供附加安全裕度。通过 AEC-Q101 认证的 MOSFET,且符合生产件批准程序 (PPAP),适用于汽车应用。

  • Power Supplies
  • Motor Control
  • Bridge Circuits
  • Avalanche Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Short Heatsink Tab Manufactured Not Sheared
  • Specially Designed Leadframe for Maximum Power Dissipation
  • These Devices are Pb−Free and are RoHS Compliant

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MVB50P03HDLT4G

Loading...

Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

260

REEL

800

N

-30

-

P-Channel

Single

15

2

50

125

-

25

-

74

3500

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :