MOSFETs | NDB6030PL

P 沟道逻辑电平增强型场效应晶体管，-30V，-30A，42mΩ

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概览

此类 P 沟道逻辑电平增强型电场效应晶体管使用安森美半导体的高单元密度 DMOS 专属工艺生产。这种极高密度工艺特别适用于最大程度降低导通电阻。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变抑制的低压应用，如 DC-DC 转换器和高能效开关电路。

  • This product is general usage and suitable for many different applications.
  • -30 A，-30 V。 RDS(ON) = 0.042 Ω @ VGS= -4.5 V，RDS(ON) = 0.025 Ω @ VGS= -10 V。
  • 在高温下额定的临界DC电气参数。
  • 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。
  • 高密度单元设计，可实现极低的RDS(ON)。
  • 175°C最大结温额定值。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDB6030PL

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-30

25

P-Channel

Single

16

-3

-30

75

-

42

-

26

1570

Price N/A

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