MOSFETs | NDS351AN

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，160mΩ

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概览

此类 N 沟道逻辑电平 MOSFET 是使用 Fairchild Semiconductor 先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。此类器件特别适用于笔记本电脑、手机、PCMCIA 卡和其他电池供电电路等低压应用，在此类应用中需要在非常小形的表面贴装封装中实现快速开关和线路内低功率损耗。

  • This product is general usage and suitable for many different applications.
  • 1.4A, 30 V
  • RDS(ON) = 160 mΩ @ VGS = 10 V
  • RDS(ON) = 250 mΩ @ VGS = 4.5 V
  • 超低栅极电荷
  • 工业标准外形SOT-23表面贴装封装采用专有SuperSOTTM-3设计，具有优异的热性能和电气性能
  • 高性能沟道技术可实现极低的RDS(ON)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS351AN

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Last Shipments

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

30

160

N-Channel

Single

20

3

1.4

0.5

-

250

2

1.3

145

Price N/A

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