MOSFETs | NDS356AP

-30V P 沟道逻辑电平增强型场效应晶体管

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概览

SuperSOT™-3 P 沟道逻辑电平增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。这些器件特别适用于笔记本电脑电源管理、便携式电子设备和其他电池供电电路等低压应用，在此类应用中需要在非常小形的表面贴装封装中实现快速高压侧开关和线路内低功率损耗。

  • This product is general usage and suitable for many different applications
  • -1.1 A, -30 V
    rDS(ON) = 0.3 Ω @ VGS = -4.5 V
    rDS(ON) = 0.2 Ω @ VGS = -10 V
  • Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
  • High Density Cell Design for Extremely Low rDS(ON)
  • Exceptional On-Resistance and Maximum DC Current Capability

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS356AP

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Last Shipments

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

-30

200

P-Channel

Single

20

-3

-1.1

0.5

-

300

-

3.4

280

Price N/A

More Details

NDS356AP-NB8L005A

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Obsolete

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

-30

200

P-Channel

Single

20

-3

-1.1

0.5

-

300

-

3.4

280

Price N/A

More Details

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