NDS8434

单路 P 沟道增强型场效应晶体管 -20V，-6.5A，35mΩ

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CAD模型

概览

此类双 P 沟道增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供出色的开关性能。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如笔记本电脑电源管理和其他电池供电电路。

应用

This product is general usage and suitable for many different applications.

特性

-6.5 A, -20 V
r_DS(ON) = 35 mΩ @ V_GS = -4.5 V
r_DS(ON) = 50 mΩ @ V_GS = -2.7 V
High Density Cell Design for Extremely Low r_DS(ON)
High Power and Current Handling Capability in a Widely Used Surface Mount Package

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDS8434

Obsolete

SOIC-8

751EB

260

REEL

2500

-20

P-Channel

Single

-8

-1

-6.5

2.5

2330

Price N/A

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MOSFETs | NDS8434

单路 P 沟道增强型场效应晶体管 -20V，-6.5A，35mΩ

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