MOSFETs | NDS9952A

双 N 和 P 沟道增强型场效应晶体管，30V

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CAD Model

CAD模型

概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如笔记本电脑电源管理和其他电池供电电路。

  • This product is general usage and suitable for many different applications.
  • N-Channel 3.7A, 30V, RDS(ON)=0.08W @ VGS=10V,
    P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V.
  • 通态电阻RDS(ON)极低的高密度单元设计。
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装。
    表面贴装封装中的双（N＆P沟道）MOSFET。
  • Dual (N & P-Channel) MOSFET in surface mount package.

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS9952A

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±30

N:80,P:130

Complementary

Dual

20

±2.8

N: 3.7, P: -2.9

1.6

-

N:110,P:200

-

10

N: 320, P: 350

Price N/A

More Details

NDS9952A-F011

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

4000

N

±30

N:80,P:130

Complementary

Dual

20

±2.8

N: 3.7, P: -2.9

1.6

-

N:110,P:200

-

10

N: 320, P: 350

Price N/A

More Details

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