MOSFETs | NTB75N03-06

功率 MOSFET，30 V，75A，8mΩ，单 N 沟道，D2PAK

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概览

此 20 VGS 门极驱动垂直功率 MOSFET 是一款通用型零件，采用低成本功率封装，提供了当今“最佳设计”。雪崩能量温度使得此零件成为雪崩和换相模式下的理想设计。该漏极-源极二极管具有理想的快速软恢复。

  • Power Supplies
  • Inductive Loads
  • PWM Motor Controls
  • Replaces MTP1306 and MTB1306 in Many Applications
  • Ultra-Low RDS(on), Single Base, Advanced Technology
  • SPICE Parameters Available
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperatures
  • High Avalanche Energy Specified
  • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
  • Pb-Free Packages are Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTB75N03-006

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418B-04

1

235

TUBE

50

N

30

-

N-Channel

Single

-

-

75

150

-

-

-

-

-

Price N/A

More Details

NTB75N03-6G

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418B-04

1

260

TUBE

50

N

30

-

N-Channel

Single

-

-

75

150

-

-

-

-

-

Price N/A

More Details

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