MOSFETs | NTHC5513

互补，ChipFET™，功率 MOSFET，20V

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CAD Model

CAD模型

概览

此互补（N 和 P 沟道）器件使用小占地面积封装和安森美半导体领先的 RDS(on) 技术，可提高电路效率。 该性能适用于便携式或手持式应用。

  • Load Switch Applications Requiring Level Shift
  • DC-DC Conversion Circuits
  • Drives Small Brushless DC Motors
  • Designed for Power Management Applications in Portable and Battery Power Products
  • Complentary N-Channel and P-Channel MOSFET
  • Small Size, 40% Smaller than TSOP-6 Package
  • Leadless SMD Package Featuring Complementary Pair
  • ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages
  • Low RDS(on) in a ChipFET™ Package for High Efficiency Performance
  • Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTHC5513T1G

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Last Shipments

CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

N

±20

-

Complementary

Dual

12

1.2

2.9

1.1

N:80.0, P: 200.0

N:60.0, P: 130.0

2.3

6

N: 180, P: 185

Price N/A

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