功率 MOSFET,20V,4.4A,80mΩ,双 P 沟道,ChipFET,带肖特基二极管

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20 V,FETKY,P 沟道,-4.4 A,带 3.7 A 肖特基势垒二极管,ChipFET

  • Li-Ion Battery Charging
  • High Side DC-DC Conversion Circuits
  • High Side Drive for Small Brushless DC Motors
  • Power Management in Portable, Battery Powered Products
  • Leadless SMD Package Featuring a MOSFET and Schottky Diode
  • 40% Smaller than TSOP-6 Package
  • Leadless SMD Package Provides Great Thermal Characteristics
  • Independent Pinout to each Device to Ease Circuit Design
  • Trench P-Channel for Low On Resistance
  • Ultra Low VF Schottky
  • These are Pb-Free Devices

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTHD3133PFT1G

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Obsolete

CAD Model

Pb

A

H

P

ChipFET-8

1

260

REEL

3000

N

20

-

P-Channel

with Schottky Diode

8

1.5

4.4

2.1

110

80

7.4

-

680

Price N/A

More Details

NTHD3133PFT3G

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Obsolete

CAD Model

Pb

A

H

P

ChipFET-8

1

260

REEL

10000

N

20

-

P-Channel

with Schottky Diode

8

1.5

4.4

2.1

110

80

7.4

-

680

Price N/A

More Details

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