单 N 沟道小信号 MOSFET,12V,758mA,160mΩ

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小信号 MOSFET,12 V,758 mA,单 N 沟道,SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm 封装

  • Load Switch
  • High Speed Interface
  • Level Shift and Translate
  • Optimized for Power Managment
  • Wearable
  • Smart Phone
  • Media Tablet
  • Low Profile SOT-883 (XDFN3) 1.0 x 0.6 x 0.4 mm
  • Ultra Low RDS(on)
  • 1.8 V Gate Drive
  • RoHS Compliant

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTNS3C68NZT5G

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Obsolete

CAD Model

Pb

A

H

P

SOT-883

1

260

REEL

8000

N

12

-

N-Channel

Single

±10

1

0.76

0.16

230

160

0.9

1.8

67

Price N/A

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