单 P 沟道小信号 MOSFET -20V,-200mA,3.5Ω

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小信号 MOSFET −20 V,−200 mA,单 P 沟道,1.0 x 0.6 mm SOT−1123 封装

  • High Side Switch
  • High Speed Interfacing
  • Optimized for Power Management in Ultra Portable Equipment
  • Single P-Channel MOSFET
  • Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
  • 1.5 V Gate Voltage Rating
  • Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
    Thin Environments such as Portable Electronics.

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTNUS3171PZT5G

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Last Shipments

CAD Model

Pb

A

H

P

SOT-1123-3

1

260

REEL

8000

N

-20

3500

P-Channel

Single

8

1

0.2

0.2

4000

3500

-

-

13

Price N/A

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