功率 MOSFET,N 沟道,SUPERFET® III,FRFET®,650 V,36 A,95 mΩ,TO-220

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  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 66 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 82 mΩ

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTP095N65S3HF

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Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

650

95

N-Channel

Single

30

5

36

272

-

-

-

66

-

$2.9341

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