MOSFETs | NUS3116MT

Power MOSFET 12V 6.2A 110 mOhm Dual P-Channel DFN8 with PNP Low VCE Transistors

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概览

This P-Channel Power MOSFET integrates one high performance power MOSFET and two Low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in battery-powered portable electronics.

  • Main Switch and Battery Charging Mux for Portable Electronics
  • Optimized for Commercial PMUs from Top Suppliers
  • Cell Phones and other Portable Equipment
  • High Performance Power MOSFET + Dual Low Vce(sat) Transistors as Charging Power Mux
  • 3.0 x 3.0 x 0.8 mm WDFN Package
  • Independent Pin-out Provides Circuit Flexibility
  • Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
  • This is a Pb-Free Device

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NUS3116MTR2G

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Obsolete

CAD Model

Pb

A

H

P

DFN-8

506BC

1

260

REEL

3000

N

12

-

P-Channel & Dual PNP

Dual

8

1.1

5.47

1.7

50

40

13

-

1329

Price N/A

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