Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK

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概览

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.

  • FAN Motor, SMPS, DC/DC
  • Low On-Resistance
  • High Speed Switching
  • Low Gate Charge
  • ESD Diode - Protected Gate
  • Pb-Free and RoHS Compliance

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

SFT1431-W

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Obsolete

CAD Model

Pb

A

H

P

IPAK / TP

NA

0

BLKBG

500

N

35

25

N-Channel

Single

20

2.6

11

15

-

39.5

7.2

17.3

960

Price N/A

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