feedback
评价本网页

需要帮助?

NTMFS4983NF: 单 N 沟道,功率 MOSFET,30V,106A,2.1mΩ

Datasheet: Power MOSFET, 30 V, 106 A, Single N-Channel
Rev. 4 (84kB)
产品概览
»浏览可靠性数据
»查看材料成分
» 产品更改通知
功率 MOSFET,30 V,106 A,单 N 沟道,SO−8 FL
特性
 
  • Integrated Schottky Diode
  • Low rDS(on) to Minimize Conduction Loss
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant
应用
  • CPU Power Delivery
  • Synchronous Rectification for DC−DC Converters
  • Low Side Switching
  • Telecom Secondary Side Rectification
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
ONS321A5VGEVB Active
Pb-free
5 Vgs MOSFET Evaluation Board
ONS321B12VGEVB Active
Pb-free
12 Vgs MOSFET Evaluation Board
Availability & Samples
Specifications
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTMFS4983NFT1G Active
Pb-free
Halide free
NTMFS4983NF SO-8FL / DFN-5 488AA 1 260 Tape and Reel 1500 $0.4652
NTMFS4983NFT3G Active
Pb-free
Halide free
NTMFS4983NF SO-8FL / DFN-5 488AA 1 260 Tape and Reel 5000 $0.4009
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMFS4983NFT1G  
 $0.4652 
Pb
H
 Active   
N-Channel
Single
30
20
2.3
106
3.13
-
3.1
2.1
25
22.6
3250
SO-8FL / DFN-5
NTMFS4983NFT3G  
 $0.4009 
Pb
H
 Active   
N-Channel
Single
30
20
2.3
106
3.13
-
3.1
2.1
25
22.6
3250
SO-8FL / DFN-5
外形
488AA   
之前浏览的产品
清除列表

精选视频
5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.