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NTTFS4930N: 单 N 沟道,功率 MOSFET,30V,23A,23mΩ

Datasheet: MOSFET — Power, Single, N-Channel, μ8FL 30 V, 23 A
Rev. 2 (127kB)
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功率 MOSFET,30 V,23A,23 mΩ,单 N 沟道,u8FL
特性
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • RoHS Compliant
应用   终端产品
  • DC-DC Converters
  • Power Load Switch
  • Notebook Battery Management
  • Motor Control
 
  • Notebook PC, Desktop PC, Server,Game Console, Netcom, Point of Load Module
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
ONS321A5VGEVB Active
Pb-free
5 Vgs MOSFET Evaluation Board
ONS321B12VGEVB Active
Pb-free
12 Vgs MOSFET Evaluation Board
Availability & Samples
Specifications
外形
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTTFS4930NTAG Active
Pb-free
Halide free
NTTFS4930N WDFN-8 / u8FL 511AB 1 260 Tape and Reel 1500 $0.2133
NTTFS4930NTWG Obsolete
Pb-free
Halide free
NTTFS4930N WDFN-8 / u8FL 511AB 1 260 Tape and Reel 5000  
市场订货至交货的时间(周) : 8 to 12
ON Semiconductor   (2020-09-02 00:00) : 12,000
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTTFS4930NTAG  
 $0.2133 
Pb
H
 Active   
N-Channel
Single
30
20
2.2
23
20.2
-
30
23
15.7
9.8
476
WDFN-8 / u8FL
外形
511AB   
封装
NTTFS4930N: 单 N 沟道,功率 MOSFET,30V,23A,23mΩ
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5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
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