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NVMFD5C680NL: 双 N 沟道功率 MOSFET 60V,26A,28mΩ

Datasheet: MOSFET — Power, Dual N-Channel 60 V, 28 mΩ, 26 A
Rev. 1 (271kB)
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适用于紧凑和高能效设计的汽车用功率 MOSFET,采用 5x6mm 扁平引线封装且具有较高的热性能。可用于增强光学检测的可润湿侧翼选项。通过 AEC-Q101 认证的 MOSFET,符合生产件批准程序 (PPAP),适用于汽车应用。
特性   优势
     
  • Small Footprint (5x6 mm)
 
  • Compact Design
  • Low rDS(on)
 
  • Minimize Conduction Loss
  • Low QG and Capacitance
 
  • Minimize Driver Losses
  • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection
   
  • AEC−Q101 Qualified and PPAP Capable
   
  • RoHS Compliant
   
应用   终端产品
  • Automotive
  • Reverser battery protection
  • Switching Power Supplies
  • Power Switches - High Side Driver, Low Side Driver, H-Bridges
 
  • Solenoid Driver - ABS, Fuel injection
  • Motor Control - EPS, Wipers, Fans, Seats
  • Load Switch - ECU, Chassis, Body
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SEC-6D6KW-OBC-TTP-GEVB Active
Pb-free
A 6.6kW OBC evaluation board using Totem pole topology
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVMFD5C680NLT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVMFD5C680NL SO-8FL Dual / DFN-8 506BT 1 260 Tape and Reel 1500 Contact Sales Office
NVMFD5C680NLWFT1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVMFD5C680NL SO-8FL Dual / DFN-8 506BT 1 260 Tape and Reel 1500 Contact Sales Office
市场订货至交货的时间(周) : Contact Factory
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NVMFD5C680NLT1G  
Pb
A
H
P
 Active   
N-Channel
Dual
60
±20
2.2
19
19
-
Q1=Q2=41
Q1=Q2=28
11.5
5
350
SO-8FL Dual / DFN-8
NVMFD5C680NLWFT1G  
Pb
A
H
P
 Active   
N-Channel
Dual
60
±20
2.2
19
19
-
Q1=Q2=41
Q1=Q2=28
11.5
5
350
SO-8FL Dual / DFN-8
外形
506BT   
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