碳化硅 (SiC)技术优势

与硅器件相比,SiC器件的介电击穿场强高10倍,电子饱和速度高2倍,能带隙高3倍,热导率高3倍。

极高可靠性

安森美SiC 器件具有专利的终端结构,可在恶劣的环境条件下提供卓越的鲁棒性。

H3TRB Testing (High Temp/Humidity/Bias), 85C/85% RH/85% V (960V)


鲁棒性

安森美肖特基势垒SiC二极管在漏电流方面始终保持同类最佳的性能。


强固性

SiC二极管强固性 – 浪涌和雪崩

Surge current waveform of a 650V/30A onsemi SiC diode
Avalanche current waveform of a 650V/30A onsemi SiC diode

宽禁带应用

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