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NXH006P120MNF2: SiC Modules, Half Bridge 2-PACK 1200 V, 6 mohm SiC MOSFET, F2 Package

Datasheet: F2HALFBR Module
Rev. P4 (1534kB)
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The NXH006P120MNF2 is a half-bridge or 2-PACK SiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with 18V-20V gate drive.
特性   优势
     
  • Robust M1 planar SiC MOSFET technology
 
  • Improved reliability from planar technology and from lower die thermal resistance
  • 18V to 20V gate drive
 
  • 20V operation for lower losses; 18V for compatibility with other modules
应用   终端产品
  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion
 
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters
技术文档及设计资源
应用注释 (2) 封装图纸 (1)
数据表 (1)  
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NXH006P120MNF2PTG Active
Pb-free
Halide free
NXH006P120MNF2 PIM36 56.7x42.5 (PRESS FIT) 180BY NA BTRAY 20 $165.0472
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (Ω)
Package Type
NXH006P120MNF2PTG  
 $165.0472 
Pb
H
 Active   
2-PACK
1200
6
PIM36 56.7x42.5 (PRESS FIT)
外形
180BY   
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