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ONC18: 0.18 µm CMOS 工艺技术

概览
产品概述
安森美半导体的ONC18工艺是一种低成本、兼容业界工艺的0.18 µm CMOS技术,制造地点位于美国。这种拥有全特性的工艺包括1.8 V/3.3 V双门I/O、额定及大容值金属-绝缘层-金属(MIM)电容、电阻及6层金属。全面的设计套件提供可扩展内核、I/O及存储器库。提供针脚(stitching)和往复(shuttle)原型等专门服务。ONC18还用作高集成度、高压混合信号工艺平台,非常适合众多汽车工业医疗军事应用

特性
  • 4至6层金属
  • 1.0 fF/µm2金属-绝缘体-金属(MIM)电容
  • 2.0 fF/µm2金属-绝缘体-金属(MIM)电容(与设计有关)
  • 4.0 fF/µm2金属-绝缘体-金属(MIM)堆叠电容(与设计有关)
  • 硅化物工艺,带可选阻断(optional blocking)
  • 支持1.8 V和3.3V内核电压及3.3 V I/O电压,带5 V容限输入
  • 多晶硅(poly)电阻、扩散(diffusion)电阻及阱(well)电阻

工艺特性

工作电压 1.8 V, 3.3 V
衬底材料 P型
晶体管抽线(Drawn)长度 0.18 µm
门氧化物厚度 2.9 nm/6.5 nm
触点/通孔尺寸 0.22 µm/0.26 µm
金属厚度 M1-MTop-1 - 0.56 µm
MT(0.8um) - 0.94 µm
MT(3.0um) - 3.14 µm
接触(contacted)金属间距
第1层金属 0.46 µm
第2层金属至第1顶层 0.56 µm
金属顶层(MT)(0.8 µm) 0.9 µm
金属顶层(MT) (3.0 µm) 6 µm
金属成分 铝-0.5%铜/氮化钛

工艺选择 掩膜层数量
1层多晶硅,4层金属 25
1层多晶硅,5层金属 27
1层多晶硅,6层金属 29
1层多晶硅,4层金属,金属-绝缘体-金属(MIM) 26
1层多晶硅,5层金属,金属-绝缘体-金属(MIM) 28
1层多晶硅,6层金属,金属-绝缘体-金属(MIM) 30

器件特性
(所有值均是25°C下的典型值)

晶体管

N沟道 典型值 单位
Vt (标准VT) 0.476 V
Idsat (Standard VT) 600 µA/µm
Vt (高VT) 0.649 V
Idsat (高VT) 410 µA/µm
Vt (固有VT) -0.093 V
Idsat (固有VT) 546 µA/µm

P沟道 典型值 单位
Vt (标准VT) -0.49 V
Idsat (标准VT) -260 µA/µm
Vt (高VT) -0.65 V
Idsat (高VT) -178 µA/µm

厚门晶体管

N沟道 典型值 单位
Vt (标准VT) 0.765 V
Idsat (标准VT) 550 µA/µm
Vt (低VT) 0.33 V
Idsat (低VT) 630 µA/µm
Vt (固有VT) -0.112 V
Idsat (固有VT) 520 µA/µm
Vt (15 Vds 器件) 0.701 V
Idsat (15 Vds 器件) 397 µA/µm

P沟道 典型值 单位
Vt -0.673 V
Idsat -310 µA/µm
Vt (15 Vds 器件) -0.816 V
Idsat (15 Vds 器件) -130 µA/µm

电阻

典型值 单位
N+ 多晶硅(Poly) 6.55 Ω/square
P+ 多晶硅(Poly) 5.78 Ω/square
N+ 未硅化多晶硅(Poly Unsalicided) 290 Ω/square
P+ 未硅化多晶硅(Poly Unsalicided) 290 Ω/square
N-未硅化扩散(Diffusion Unsalicided) 68 Ω/square
P-未硅化扩散(Diffusion Unsalicided) 127 Ω/square
P+ 多晶硅低温系数 295 Ω/square
高阻值多晶硅电阻 1037 Ω/square
N阱 950 Ω/square
高阻值多晶硅电阻 1037 Ω/square
顶层金属电阻(0.8 µm) 37 mΩ/square
顶层金属电阻(3 µm) 9.8 mΩ/square

电容

典型值 单位
单MIM面积 1 fF/µm2
单MIM (HD)面积 2 fF/µm2
堆叠MIM (HD)面积 4 fF/µm2
Moscap (薄门) 6.5 fF/µm2
Moscap (厚门) 4.88 fF/µm2
线性Moscap (薄门) 7.9 fF/µm2
线性Moscap (厚门) 3.7 fF/µm2
插指电容(Finger Cap) 0.51 fF/µm2
插指电容(高密度) 0.7 fF/µm2

二极管

齐纳二极管 典型值 单位
击穿电压 -5.1 V @ i=10uA
正向稳压输入电压 0.78 V @

肖特基二极管 典型值 单位
正向电流 -9.783 LOG(A)
正向电压 0.325 V @
(所有值均是1.8 V、25°C下的典型值)

前工序数字设计
数字
综合库
仿真库
模拟
设计规则
Spice模型

标准内核单元 密度(门/mm2) 工作电压 泄漏功率(nW) 传播延迟(ps) 动态功率(mW/MHz/门)
1.8 V 标准内核单元 99.6 k 1 V, 1.5 V, 1.8 V 0.136 137 with 0.015 pF L 0.000031
1.8 V 低泄漏内核单元 99.6 k 1.5 V, 1.8 V 0.008 171 with 0.0148 pF L 0.000021
3.3 V 高压内核单元 70.8 k 3.3 V 0.00097 112 with 0.0194 pF L 0.00016
电平转换器 n/a 1.8 V, 3.3 V n/a n/a n/a
* 所有数据均源于额定电压及25℃条件下的2nand单元

IO 库简介 CUP 支持 工作电压(+/-10%) N阱选择 5 V 容限 3 V 容限 焊点高度 (um) 直插式焊点间距 (um) 每焊点最大输出强度 (mA)
1.8 V 1 V, 1.8 V 常规 N Y 116.64 84.24 12
3.3 V 3.3 V, 2.2 V Y Y 129.6 84.24 12
1.8 V 1 V, 1.8 V N Y 136.08 84.24 12
3.3 V/1.8 V,带电平转换 2.2 V, 3.3 V Y Y 151.2 84.24 12
3.3 V 1.8 V, 3.3 V Y Y 151.2 84.24 12
1.8 V 薄门,3.3 V厚门,SVt,6M 1.8 V, 2.5 V, 3.3 V 常规 Y Y 235 60 24
1.8 V 薄门,3.3 V厚门,SVt,5M 1.8 V, 2.5 V, 3.3 V Y Y 235 60 24


存储器选择

编译存储器简介 存储器类型 每器件最大电容 位密度(如bits/mm^2) (1) 工作电压(V) 最大频率(MHz) (2) 泄漏电流(uA) (2) 动态功率(nW/MHz) (2)
ONC18 HVT单端口SRAM SRAM 589 Kbits 160 K 1.0, 1.5 V, 1.8 V 200 2 311
ONC18 HVT双端口SRAM DPRAM 294 Kbits 80 K 1.0, 1.5 V, 1.8 V 200 3 285
ONC18 HVT ROM ROM 1.1 Mbits 900 K 1.0, 1.5 V, 1.8 V 150 0.5 183
ONC18 SVT单端口SRAM SRAM 589 Kbits 160 K 1.0, 1.2 V 1.5 V, 1.8 V 300 50 310
ONC18 SVT双端口SRAM DPRAM 294 Kbits 80 K 1.0, 1.2 V 1.5 V, 1.8 V 300 70 300
ONC18 SVT ROM ROM 1.1 Mbits 900 K 1.0, 1.2 V 1.5 V, 1.8 V 200 40 141
ONC18 3.3 V单端口SRAM (3) SRAM 589 Kbits 110 K 1.8 V, 3.3 V 100 0.5 n/a
ONC18 3.3 V双端口SRAM (3) DPRAM 589 Kbits 75 K 1.8 V, 3.3 V 100 0.5 n/a
ONC18 3.3 V ROM (3) ROM 589 Kbits 850 K 1.8 V, 3.3 V 100 0.1 n/a
1) 所有数据均以256 Kb为例
2) 最大频率及泄漏电流是根据256 Kb配置(4Kx64)来评估的,基于PwcsV162T125
3) 此存储器编译器仍在开发之中

非易失性存储器
OTP – 一次性可编程
Sidense 1.8/3.3 V 门击穿
1kb阵列及256 kb阵列
支持现场编程
EEPROM – 无额外掩膜或工艺步骤
矢量:支持最高64位
提供内部电荷泵

CAD工具兼容性

数字设计
Synopsys 设计编译器
Cadence RTL 编译器
Mentor Graphics FastScan (DFT)

模拟/混合信号设计
Cadence Virtuoso, VirtuosoXL, Spectre
Mentor Graphics Design Architect IC、IC Station及Eldo

布局及布线
Cadence Encounter

物理验证
Mentor Graphics Calibre

更多信息请联系您的当地销售支援

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11.9 Entire Agreement; Amendment; Counterparts; Facsimile Copies. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. This Agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the same agreement. Each party hereto may deliver an executed copy of this Agreement to the other party via facsimile or other electronic means, and such executed copy(ies) sent/received via facsimile or other electronic means shall be deemed an original and binding copy.

12. Confidentiality. Notwithstanding any terms to the contrary in any non-disclosure agreements between the Parties, Licensee shall treat this Agreement and the Content as ON Semiconductor's "Confidential Information" including: not using the Confidential Information except as expressly set forth herein or otherwise authorized in writing; implementing reasonable procedures to prohibit the disclosure, unauthorized duplication, misuse or removal of the Confidential Information; and not disclosing the Confidential Information to any third party except as may be necessary and required in connection with the rights and obligations under this Agreement and subject to confidentiality obligations at least as protective as those set forth herein, or as otherwise required by law. It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement. Upon termination of this Agreement or upon written request, License shall either return all Confidential Information to ON Semiconductor along with all copies and/or derivatives made, including that on computer databases and copies of portions of the Confidential Information, or destroy all such Confidential Information and certify by written memorandum that all such Confidential Information has been destroyed.

Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party's ability to communicate directly to, or otherwise participate in either: (i) any investigation or proceeding with a United States government agency alleging a securities law violation, waste, fraud, or abuse; or (ii) an investigation or proceeding that is protected under a whistleblower provision of a U.S. federal law or regulation.

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