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FFSD0665B-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Datasheet: Silicon Carbide Schottky Diode, 650 V, 6 A
Rev. 2 (301kB)
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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
特性   优势
     
  • Max Junction Temperature 175 oC
 
  • PPAP capable
  • Avalanche Rated 24.5mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 Qualified
   
应用   终端产品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • PHEV-EV Onboard charger and DC -DC
技术文档及设计资源
仿真模型 (3) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
FFSD0665B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSD0665B-F085 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 Contact Sales Office
市场订货至交货的时间(周) : 8 to 12
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSD0665B-F085  
Pb
A
H
P
 Active   
Automotive
Single
650
6
1.7
28
160
DPAK-3 / TO-252-3
外形
369AS   
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