feedback
评价本网页

需要帮助?

NTH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4L
Rev. 1 (269kB)
产品概览
»查看材料成分
» 产品更改通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • High Junction Temperature
 
  • Tj = 175°C
  • 100% UIL Tested
   
  • RoHS Compliant
   
  • High Speed Switching and Low Capacitance
   
  • 650V rated
   
  • Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A
   
应用   终端产品
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
技术文档及设计资源
仿真模型 (3) 封装图纸 (1)
数据表 (1)  
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NTH4L015N065SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NTH4L015N065SC1 TO-247-4 340CJ NA Tube 450 $16.0516
市场订货至交货的时间(周) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTH4L015N065SC1  
 $16.0516 
Pb
A
H
P
 Active   
N-Channel
Single
650
164
15.6
251
397
175
TO-247-4
外形
340CJ   
之前浏览的产品
清除列表

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.