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NVHL160N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel, 1200 V, 160 mOhms, 17 A
Rev. 1 (234kB)
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特性   优势
     
  • 1200V rated
 
  • Blocking Voltage
  • High Speed Switching and Low Capacitance
 
  • Coss = 50
  • Qualified for Automotive According to AEC−Q101
 
  • Devices are Pb−Free and are RoHS Compliant
应用   终端产品
  • DC-DC Power
  • On Board Charging
 
  • EV/HEV
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
SECO-HVDCDC1362-15W15V-GEVB Active
Pb-free
15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
SECO-HVDCDC1362-40W15V-GEVB Active
Pb-free
40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
Availability & Samples
Specifications
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
NVHL160N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL160N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $5.6319
市场订货至交货的时间(周) : 4 to 8
ON Semiconductor   (2020-09-02 00:00) : 2,250

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL160N120SC1  
 $5.6319 
Pb
A
H
P
 Active   
N-Channel
Single
1200
26
160
24
40
175
TO-247-3LD
外形
340CX   
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Automotive High Voltage Auxiliary Power Supply
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