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Optimize EV Auxiliary Loads and Actuators

Electrify auxiliary systems for superior efficiency and comfort in EVs: thermal management with oil pumps, HVAC and battery control made smarter.

概览

电动汽车(xEV)的辅助系统逐渐取代了传统机械方案,由引擎带传动向电驱转变,提升了整体的系统效率。电池电动车(BEV)没有内燃机,因此需要将辅助系统转换为电力驱动。

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混动车(HEV)和插电混动车(PHEV)有内燃机,但其架构中的辅助系统也可以通过依靠高压电池而非引擎带运转来提升效率。尽管电压水平设计各不相同,轻度混动车(MHEV)既有12V电池也有48V电池,更大的负载可以通过48V电源网运转。这对于系统效率而言是一个优势,且能够减少线束尺寸。

在高压系统(BEV、HEV、PHEV)和中压系统(MHEV)中,电子水泵、电子压缩机、电动冷却风扇、电动涡轮、电子助力转向(EPS),还有其他辅助电机逆变器和PTC冷却液等各类应用应运而生,解决xEV日益扩大的需求。

安森美(onsemi)的车用类产品包括汽车智能电源模块(ASPM)、IGBT、碳化硅(SiC)、超级结MOSFET。汽车电源模块(APM)和栅极驱动器,使用它们能灵活设计出可扩展的系统,提升功率密度,每千瓦时成本更低,并获得优秀的热性能。

产品

Intelligent Power Modules (IPMs)
High voltage power modules with integrated gate drivers for consumer, industrial and automotive applications. Offering a large range of 3 Phase inverter modules covering power levels from 50 W to 10 kW. Available in different topologies including PFC and input bridge rectifier.
MOSFET Modules
MOSFET Modules are used for automotive motor drive and on-board charger applications. They come in 40 V, 60 V, 80 V and 650 V ratings with superjunction technology and sense resistor. Aside from the six-pack and the full and half bridge topology, they are also available in the totem pole PFC topology.
Silicon Carbide (SiC) MOSFETs

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

IGBTs
Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.
High Voltage MOSFETs
Portfolio of high voltage super-junction (SJ) MOSFETs meant for general usage and for several applications such as Power Factor correction, server/telecom power, led lighting.
Gate Drivers
GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.
IGBT Modules
IGBT Modules are used in traction and in the DC-AC stages of solar inverters, energy storage systems, uninterruptible power supplies and motor drives.
Low/Medium Voltage MOSFETs
Portfolio of comprehensive range of Low-medium voltage power Mosfets that delivers superior performance and reliability for switching applications. Our cutting-edge PowerTrench® T10 technology delivers industry leading RDS, higher power density, reduced switching losses and better thermal performance.
Digital Isolators
Products that use a high frequency modulated signal to transmit high speed digital data across a capacitive isolation barrier.

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ev auxiliary systems