储能系统
实现可靠高效的储能系统
安森美为工业和可再生能源应用提供下一代储能解决方案。凭借EliteSiC功率半导体、先进的仿真工具和强大的设计资源，我们实现了高效、可靠和可扩展的电池储能系统（BESS）。
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产品
IGBT Modules
NXH600N105L7F5S1HG
IGBT Module, I-type NPC 1050 V, 600 A IGBT
IGBT Modules
NXH800H120L7QDSG
Qdual3 1200 V 800 A Half Bridge IGBT Module
Silicon Carbide (SiC) Modules
NXH003P120M3F2PTNG
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH007F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 7 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH011F120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008T120M3F2PTHG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package
Silicon Carbide (SiC) Modules
NXH008P120M3F1PTG
Silicon Carbide (SiC) Module – EliteSiC, 8 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
Silicon Carbide (SiC) MOSFETs
NTBG022N120M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
Silicon Carbide (SiC) MOSFETs
NTBG023N065M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, D2PAK-7L
IGBTs
FGY4L160T120SWD
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 160 A
Gate Drivers
NCP51752
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control
Gate Drivers
NCP51563
5 kVRMS Isolated Dual Channel 4.5/9 A Gate Driver with High Channel-to-Channel Spacing
Documents
White Papers
优化户用太阳能系统能效、可靠性和成本
White Papers
能源基础设施应用中常用的IGBT拓扑结构
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
Application Notes
onsemi EliteSiC Gen 2 1200 V SiC MOSFET M3S Series
White Papers
Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
Tutorial
“为EliteSiC匹配栅极驱动器”教程
Application Notes
安森美新款 Elite Power 仿真工具和 PLECS 模型自助生成工具的技术优势
Collateral Brochure
克服碳化硅挑战以确保应用成功
评估板/套件
Evaluation Board
SECO-NCD57000-GEVB
Application daughter-card for NCD57000 IGBT gate driver
Evaluation Board
NCP-NCV51561TO2474LGEVB
The NCP5156x are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively.
Evaluation Board
NCP-NCV51152TO2474LGEVB
The NCP/V51152 is a family of isolated single−channel gate driver with 4.5 A / 9 A source and sink peak current respectively.
Evaluation Board
SECO-HVDCDC1362-40W-GEVB
SECO-HVDCDC1362-40W-GEVB is highly efficient and primary-side regulated (PSR) auxiliary power supply targeting HEV and EV automotive power trains.
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energy storage system