电池供电工具

Si MOSFETs control current flow between source and drain terminals via gate voltage. They're widely used in power amplifiers, voltage regulators, and switching circuits for their efficiency, speed, and power-handling capabilities.

GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications.

Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.

Portfolio of high voltage super-junction (SJ) MOSFETs meant for general usage and for several applications such as Power Factor correction, server/telecom power, led lighting.

A selection of high performance devices for interfacing with inductive position sensors for industrial and automotive applications

Integrated 1-, 2-, and 3-phase brushless dc motor drivers.