不间断电源（UPS）

Totem-Pole Continuous Conduction Mode (CCM) / Multi-mode (CrM-CCM) Power Factor Correction Controller

Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.

There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.

Our Silicon Carbide diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

Many people have been using silicon diodes in their machinery, but there is a new option for those looking for better efficiency. SiC diodes are diodes that allow for higher switching performance. They have greater power density and overall increased efficiency. Their reduced energy loss also helps to lower system costs.

Compared to silicon diodes, silicon carbide diodes are more efficient and resistant to high temperatures. They work at high frequencies and higher voltages. Since SiC diodes have faster recovery times than silicon diodes, they're ideal for any kind of current that requires a quick transition from blocking to conducting stages. They also don't get as hot as silicon, allowing them to be used in higher-temperature applications with more efficiency.

Our high-performance SiC cascode JFETs deliver best-in-class switching speed, lower switching losses, and higher efficiency. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 5mohm, utilizing less than half the die size of any other technology. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.

Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.

Advanced power module products, including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SiC Diode, and Intelligent Power Modules (IPMs).