不间断电源（UPS）
概览
安森美的碳化硅（SiC）和创新封装技术为提高密度、减少系统损耗和简化散热提供了解决之道，从而提高了各种关键任务UPS系统的整体系统可靠性。我们的系统专业技术融入于一系列优化的电源模块，支持所有关键功率级拓扑结构以及功率分立器件和量身定制的隔离栅极驱动器解决方案。我们深知UPS系统的关键性，因此制定了”基建级“的可靠性框架。我们耐用的物理建模可提供反映实际运行情况的可预测仿真结果，从而加快开发时间。
产品
Power Factor Controllers
NCP1681
Totem-Pole Continuous Conduction Mode (CCM) / Multi-mode (CrM-CCM) Power Factor Correction Controller
SiC MOSFETs
EliteSiC discrete MOSFETs deliver low switching and conduction losses at high voltage. Compare devices by voltage, resistance, package and generation.
EliteSiC Diodes
EliteSiC Schottky diodes provide fast switching and low losses in high voltage applications. Use parametric search to select devices for efficient power designs.
SiC Cascode JFETs
Our high-performance SiC Cascode JFETs utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET.
IGBTs
Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.
Power Modules
Advanced power module products, including IGBT, MOSFET, SiC, Si/SiC Hybrid, Diode, SiC Diode, and Intelligent Power Modules (IPMs).
Gate Drivers
NCP51752
3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver with Integrated Negative Bias Control
Gate Drivers
NCD57080
Isolated High Current Gate Driver
Documents
White Papers
不间断电源 (UPS) 的设计难点和注意事项
White Papers
Designing High Frequency Uninterruptible Power Supplies for Reliability and Efficiency
White Papers
Popular Topologies in Offline Power Supplies
White Papers
DC-DC Power Conversion Topologies for Battery Energy Storage Systems (BESS)
White Papers
onsemi EliteSiC M3S Technology for High-Speed Switching Applications
White Papers
能源基础设施应用中常用的IGBT拓扑结构
Application Notes
Demystifying Three-Phase Active Front End or Power Factor Correction (PFC) Topologies
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